Oxidative‐Etching‐Assisted Synthesis of Centimeter‐Sized Single‐Crystalline Graphene

Centimeter-sized single-crystalline graphene is obtained by an oxidative-etching-assisted chemical vapor deposition (CVD) method. Gaseous oxidants are found to be highly responsible for graphene etching. By diminishing the uncertain amount of H2O vapor in commercial H2 and precisely introducing additional O2, the graphene nucleation density can be well controlled. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.