Flexible, Transparent, and Wafer‐Scale Artificial Synapse Array Based on TiO_x/Ti₃C₂T_x Film for Neuromorphic Computing

Abstract A high‐density neuromorphic computing memristor array based on 2D materials paves the way for next‐generation information‐processing components and in‐memory computing systems. However, the traditional 2D‐materials‐based memristor devices suffer from poor flexibility and opacity, which hinders the application of memristors in flexible electronics. Here, a flexible artificial synapse array based on TiO_x/Ti₃C₂T_x film is fabricated by a convenient and energy‐efficient solution‐processing technique, which realizes high transmittance (≈90%) and oxidation resistance (>30 days). The TiO_x/Ti₃C₂T_x memristor shows low device‐to‐device variability, long memory retention and endurance, a high ON/OFF ratio, and fundamental synaptic behavior. Furthermore, satisfactory flexibility (R = 1.0 mm) and mechanical endurance (10⁴ bending cycles) of the TiO_x/Ti₃C₂T_x memristor are achieved, which is superior to other film memristors prepared by chemical vapor deposition. In addition, high‐precision (>96.44%) MNIST handwritten digits recognition classification simulation indicates that the TiO_x/Ti₃C₂T_x artificial synapse array holds promise for future neuromorphic computing applications, and provides excellent high‐density neuron circuits for new flexible intelligent electronic equipment.