journal article·2024-01

Next‐Generation Photodetectors beyond Van Der Waals Junctions

Fang Wang, Tao Zhang, Runzhang Xie, Anna Liu, Fuxing Dai, Yue Chen, Tengfei Xu, Hailu Wang, Zhen Wang, Lei Liao, Jianlu Wang, Peng Zhou, Weida Hu

Advanced Materials· Volume 36· Issue 3
Publisher page

Abstract

Abstract With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high‐performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal‐to‐noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high‐performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Infrared Physics Chinese Academy of Sciences Shanghai 200083 China

School of Electronic, Electrical and Communication Engineering University of Chinese Academy of Sciences Beijing 100049 China

School of Microelectronics Frontier Institute of Chip and System Fudan University Shanghai 200433 China

College of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 China

Funding

National Natural Science Foundation of China · Science and Technology Commission of Shanghai Municipality

References (100+)

Show source-provided references
1. 10.1126/science.110289610.1126/science.1102896 ↗
2. 10.1038/s41467-021-21042-510.1038/s41467-021-21042-5 ↗
3. 10.1103/PhysRevApplied.16.04404910.1103/PhysRevApplied.16.044049 ↗
4. 10.1038/s41467-022-32062-010.1038/s41467-022-32062-0 ↗
5. 10.1038/s41586-021-03701-110.1038/s41586-021-03701-1 ↗
6. 10.1038/s41586-022-04548-w10.1038/s41586-022-04548-w ↗
7. 10.1038/s41467-022-29171-110.1038/s41467-022-29171-1 ↗
8. 10.1038/s41928-022-00713-110.1038/s41928-022-00713-1 ↗
9. 10.1038/s41928-022-00747-510.1038/s41928-022-00747-5 ↗
10. 10.1038/s41566-022-01058-z10.1038/s41566-022-01058-z ↗
11. 10.1126/science.add854410.1126/science.add8544 ↗
12. 10.1002/adma.20210777210.1002/adma.202107772 ↗
13. 10.1002/adma.20220612210.1002/adma.202206122 ↗
14. 10.1002/adma.20210105910.1002/adma.202101059 ↗
15. 10.1002/adma.20210841210.1002/adma.202108412 ↗
16. 10.1002/adma.20220348110.1002/adma.202203481 ↗
17. 10.1002/adma.20210773410.1002/adma.202107734 ↗
18. 10.1002/adma.20220866410.1002/adma.202208664 ↗
19. 10.1063/1.11010510.1063/1.110105 ↗
20. 10.1016/0921-4526(93)90080-P10.1016/0921-4526(93)90080-P ↗
21. 10.1007/978-3-642-87640-010.1007/978-3-642-87640-0 ↗
22. 10.1038/s41566-018-0288-z10.1038/s41566-018-0288-z ↗
23. 10.1038/s41565-022-01076-610.1038/s41565-022-01076-6 ↗
24. 10.1002/inf2.1227510.1002/inf2.12275 ↗
25. 10.1201/b2195110.1201/b21951 ↗
26. 10.1002/adma.20210494210.1002/adma.202104942 ↗
27. 10.1038/s41467-019-12707-310.1038/s41467-019-12707-3 ↗
28. 10.1002/adfm.20190031410.1002/adfm.201900314 ↗
29. 10.1038/s41377-021-00694-410.1038/s41377-021-00694-4 ↗
30. 10.1126/sciadv.abj252110.1126/sciadv.abj2521 ↗
31. 10.1038/s41377-022-00814-810.1038/s41377-022-00814-8 ↗
32. 10.1109/T-ED.1983.2113210.1109/T-ED.1983.21132 ↗
33. 10.1016/0168-9002(90)90471-H10.1016/0168-9002(90)90471-H ↗
34. 10.1109/DRC.2015.717552310.1109/DRC.2015.7175523 ↗
35. 10.1063/1.494237210.1063/1.4942372 ↗
36. 10.1038/s41566-021-00814-x10.1038/s41566-021-00814-x ↗
37. 10.1038/s41565-018-0348-z10.1038/s41565-018-0348-z ↗
38. 10.1002/adma.20220619610.1002/adma.202206196 ↗
39. 10.1063/1.236023510.1063/1.2360235 ↗
40. 10.1002/adma.20220376610.1002/adma.202203766 ↗
41. 10.1038/s41928-021-00586-w10.1038/s41928-021-00586-w ↗
42. 10.1038/s41467-023-36117-810.1038/s41467-023-36117-8 ↗
43. 10.1002/adma.20150334010.1002/adma.201503340 ↗
44. 10.1021/acs.nanolett.6b0010410.1021/acs.nanolett.6b00104 ↗
45. 10.1038/s41467-022-30951-y10.1038/s41467-022-30951-y ↗
46. 10.1038/s41467-019-13769-z10.1038/s41467-019-13769-z ↗
47. 10.1038/s41467-021-24296-110.1038/s41467-021-24296-1 ↗
48. 10.1038/s41467-019-11328-010.1038/s41467-019-11328-0 ↗
49. 10.1126/science.abg316110.1126/science.abg3161 ↗
50. 10.1038/s41928-022-00755-510.1038/s41928-022-00755-5 ↗
51. 10.1002/adfm.20180380710.1002/adfm.201803807 ↗
52. 10.1038/s41467-022-34421-310.1038/s41467-022-34421-3 ↗
53. 10.1002/advs.20170032310.1002/advs.201700323 ↗
54. 10.1039/C5CS00106D10.1039/C5CS00106D ↗
55. 10.1038/s41467-020-16125-810.1038/s41467-020-16125-8 ↗
56. 10.1002/smll.20190439610.1002/smll.201904396 ↗
57. 10.1038/s41377-020-00406-410.1038/s41377-020-00406-4 ↗
58. 10.1038/s41565-021-01003-110.1038/s41565-021-01003-1 ↗
59. 10.1016/j.nanoen.2017.05.00410.1016/j.nanoen.2017.05.004 ↗
60. 10.1038/nature2105010.1038/nature21050 ↗
61. 10.1002/advs.20190163710.1002/advs.201901637 ↗
62. 10.1038/srep1169910.1038/srep11699 ↗
63. 10.1038/s42254-019-0043-510.1038/s42254-019-0043-5 ↗
64. 10.1038/ncomms1447410.1038/ncomms14474 ↗
65. 10.1038/s41467-017-01978-310.1038/s41467-017-01978-3 ↗
66. 10.1038/s41566-021-00787-x10.1038/s41566-021-00787-x ↗
67. 10.1103/PhysRevB.98.24530910.1103/PhysRevB.98.245309 ↗
68. 10.1103/PhysRevB.94.24543410.1103/PhysRevB.94.245434 ↗
69. 10.1038/s41467-018-03864-y10.1038/s41467-018-03864-y ↗
70. 10.1103/PhysRevB.103.07543010.1103/PhysRevB.103.075430 ↗
71. 10.1038/s41598-020-62431-y10.1038/s41598-020-62431-y ↗
72. 10.1038/nnano.2012.9510.1038/nnano.2012.95 ↗
73. 10.1038/ncomms188210.1038/ncomms1882 ↗
74. 10.1038/s41586-019-1718-x10.1038/s41586-019-1718-x ↗
75. 10.1038/s41467-017-00427-510.1038/s41467-017-00427-5 ↗
76. 10.1038/nphys320110.1038/nphys3201 ↗
77. 10.1038/nphys269110.1038/nphys2691 ↗
78. 10.1103/PhysRevLett.114.03740110.1103/PhysRevLett.114.037401 ↗
79. 10.1038/nphys320310.1038/nphys3203 ↗
80. 10.1021/acs.nanolett.6b0252710.1021/acs.nanolett.6b02527 ↗
81. 10.1126/sciadv.160311310.1126/sciadv.1603113 ↗
82. 10.1038/nnano.2016.4910.1038/nnano.2016.49 ↗
83. 10.1038/nnano.2012.9610.1038/nnano.2012.96 ↗
84. 10.1021/acs.nanolett.5b0062610.1021/acs.nanolett.5b00626 ↗
85. 10.1021/acs.nanolett.6b0417110.1021/acs.nanolett.6b04171 ↗
86. 10.1038/ncomms1064310.1038/ncomms10643 ↗
87. 10.1103/PhysRevLett.119.12740310.1103/PhysRevLett.119.127403 ↗
88. 10.1103/PhysRevB.92.12140310.1103/PhysRevB.92.121403 ↗
89. 10.1038/nnano.2017.6810.1038/nnano.2017.68 ↗
90. 10.1021/acs.nanolett.8b0110510.1021/acs.nanolett.8b01105 ↗
91. 10.1038/s41565-019-0629-110.1038/s41565-019-0629-1 ↗
92. 10.1126/science.aan534810.1126/science.aan5348 ↗
93. 10.1126/sciadv.abg809410.1126/sciadv.abg8094 ↗
94. 10.1002/adma.20190690810.1002/adma.201906908 ↗
95. 10.1063/1.35425210.1063/1.354252 ↗
96. 10.1063/1.313448510.1063/1.3134485 ↗
97. 10.1063/1.178173110.1063/1.1781731 ↗
98. 10.1126/science.aan681410.1126/science.aan6814 ↗
99. 10.1126/sciadv.aap909610.1126/sciadv.aap9096 ↗
100. 10.1038/s41565-021-00942-z10.1038/s41565-021-00942-z ↗