Highly Robust Transparent and Conductive Gas Diffusion Barriers Based on Tin Oxide
Source abstract
Abstract
Transparent and electrically conductive gas diffusion barriers are reported. Tin oxide (SnOx) thin films grown by atomic layer deposition afford extremely low water vapor transmission rates (WVTR) on the order of 10−6 g (m2 day)−1, six orders of magnitude better than that established with ITO layers. The electrical conductivity of SnOx remains high under damp heat conditions (85 °C/85% relative humidity (RH)), while that of ZnO quickly degrades by more than five orders of magnitude. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Electronic Devices University of Wuppertal Rainer‐Gruenter‐Str. 21 42119 Wuppertal Germany
Electronic Materials and Nanoelectronics Ruhr‐Universität Bochum Universitätsstr. 150 44801 Bochum Germany
Chair of Large Area Optoelectronics University of Wuppertal Rainer‐Gruenter‐Str. 21 Wuppertal 42119 Germany
Funding
German Federal Ministry for Education and Research · Deutsche Forschungsgemeinschaft (DFG) · Emmy-Noether-Programme of the DFG
References (34)
Show source-provided references
1. 10.1021/nl500390f10.1021/nl500390f ↗
2. 10.1117/12.41687810.1117/12.416878 ↗
3. 10.1063/1.222191210.1063/1.2221912 ↗
4. 10.1063/1.345532410.1063/1.3455324 ↗
5. 10.1002/adma.20080344010.1002/adma.200803440 ↗
6. 10.1002/adma.20120435810.1002/adma.201204358 ↗
7. 10.1116/1.283508710.1116/1.2835087 ↗
8. 10.1116/1.481635410.1116/1.4816354 ↗
9. 10.1016/j.solmat.2013.12.01410.1016/j.solmat.2013.12.014 ↗
10. 10.1016/j.tsf.2014.07.00510.1016/j.tsf.2014.07.005 ↗
11. 10.1016/j.tsf.2011.06.09510.1016/j.tsf.2011.06.095 ↗
12. 10.1016/j.orgel.2013.12.00110.1016/j.orgel.2013.12.001 ↗
13. 10.1063/1.162601510.1063/1.1626015 ↗
14. 10.1039/c2jm16557k10.1039/c2jm16557k ↗
15. 10.1021/cm101110810.1021/cm1011108 ↗
16. 10.1063/1.351947610.1063/1.3519476 ↗
17. 10.1103/PhysRevLett.101.05550210.1103/PhysRevLett.101.055502 ↗
18. 10.1116/1.366476210.1116/1.3664762 ↗
19. 10.1116/1.472944710.1116/1.4729447 ↗
20. 10.1063/1.315963910.1063/1.3159639 ↗
21. 10.1016/j.progsurf.2005.09.00210.1016/j.progsurf.2005.09.002 ↗
22. 10.1116/1.481271710.1116/1.4812717 ↗
23. 10.1063/1.481945110.1063/1.4819451 ↗
24. 10.1364/AO.37.00733410.1364/AO.37.007334 ↗
25. 10.1016/0022-0248(76)90040-310.1016/0022-0248(76)90040-3 ↗
26. 10.1038/am.2012.5610.1038/am.2012.56 ↗
27. 10.1016/j.orgel.2011.06.01510.1016/j.orgel.2011.06.015 ↗
28. 10.1364/OL.34.00032510.1364/OL.34.000325 ↗
29. 10.1038/nphoton.2011.4610.1038/nphoton.2011.46 ↗
30. 10.1016/S0079-6425(02)00002-610.1016/S0079-6425(02)00002-6 ↗
31. 10.1002/aenm.20150027710.1002/aenm.201500277 ↗
32. 10.1016/S0040-6090(00)01769-710.1016/S0040-6090(00)01769-7 ↗
33. 10.1063/1.297517610.1063/1.2975176 ↗
34. 10.1063/1.278417610.1063/1.2784176 ↗