Near Room‐Temperature Memory Devices Based on Hybrid Spin‐Crossover@SiO2 Nanoparticles Coupled to Single‐Layer Graphene Nanoelectrodes
Source abstract
Abstract
The charge transport properties of SCO [Fe(Htrz)2(trz)](BF4) NPs covered with a silica shell placed in between single-layer graphene electrodes are reported. A reproducible thermal hysteresis loop in the conductance above room-temperature is evidenced. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Molecular Junctions and Nanostructures · Magnetism in coordination complexes · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Kavli Institute of Nanoscience Delft University of Technology Lorentzweg 1 2628 CJ Delft The Netherlands
Instituto de Ciencia Molecular Unversidad de Valencia Catedrático José Beltrán 2 46980 Paterna Spain
Funding
EU (Advanced ERC grants SPINMOL and Mols@Mols) · COST Action MOLSPIN · NWO/OCW · Spanish MINECO · Generalidad Valenciana (PROMETEO and ISIC Programs of excellence) · Blaise Pascal International Chair
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