Spectroscopic Proof of the Correlation between Redox‐State and Charge‐Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices
Source abstract
Abstract
By using hard X-ray photoelectron spectroscopy experimentally, proof is provided that resistive switching in Ti/Pr₀.₄₈ Ca₀.₅₂ MnO₃ (PCMO) devices is based on a redox-process that mainly occurs on the Ti-side. The different resistance states are determined by the amount of fully oxidized Ti-ions in the stack, implying a reversible redox-reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Peter Grünberg Institute Research Center Jülich 52425 Germany
CNISM and Dipartimento di Scienze Universita Roma Tre Rome Italy
CNR – Istituto per lo Studio dei Materiali Nanostrutturati (ISMN) via P. Gobetti 101 I‐40129 Bologna Italy
CNR – Istituto Officina dei Materiali (IOM) Laboratorio TASC S.S.14, Km 163.5 I‐34149 Trieste Italy
Funding
European Union Council · Federal Ministry of Education and Research (BMBF)
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