Extremely Large Gate Modulation in Vertical Graphene/WSe₂ Heterojunction Barristor Based on a Novel Transport Mechanism

A WSe2-based vertical graphene-transition metal dichalcogenide heterojunction barristor shows an unprecedented on-current increase with decreasing temperature and an extremely high on/off-current ratio of 5 × 107 at 180 K (3 × 104 at room temperature). These features originate from a trap-assisted tunneling process involving WSe2 defect states aligned near the graphene Dirac point. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.