journal article·2022-08Open access

Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

Gianluca Milano, Masakazu Aono, Luca Boarino, Umberto Celano, Tsuyoshi Hasegawa, Michael Kozicki, Sayani Majumdar, Mariela Menghini, Enrique Miranda, Carlo Ricciardi, Stefan Tappertzhofen, Kazuya Terabe, Ilia Valov

Advanced Materials· Volume 34· Issue 32

Abstract

Abstract Quantum effects in novel functional materials and new device concepts represent a potential breakthrough for the development of new information processing technologies based on quantum phenomena. Among the emerging technologies, memristive elements that exhibit resistive switching, which relies on the electrochemical formation/rupture of conductive nanofilaments, exhibit quantum conductance effects at room temperature. Despite the underlying resistive switching mechanism having been exploited for the realization of next‐generation memories and neuromorphic computing architectures, the potentialities of quantum effects in memristive devices are still rather unexplored. Here, a comprehensive review on memristive quantum devices, where quantum conductance effects can be observed by coupling ionics with electronics, is presented. Fundamental electrochemical and physicochemical phenomena underlying device functionalities are introduced, together with fundamentals of electronic ballistic conduction transport in nanofilaments. Quantum conductance effects including quantum mode splitting, stability, and random telegraph noise are analyzed, reporting experimental techniques and challenges of nanoscale metrology for the characterization of memristive phenomena. Finally, potential applications and future perspectives are envisioned, discussing how memristive devices with controllable atomic‐sized conductive filaments can represent not only suitable platforms for the investigation of quantum phenomena but also promising building blocks for the realization of integrated quantum systems working in air at room temperature.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Advanced Materials Metrology and Life Sciences Division INRiM (Istituto Nazionale di Ricerca Metrologica) Strada delle Cacce 91 Torino 10135 Italy

International Center for Materials Nanoarchitectonics (WPI‐MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba Ibaraki 305‐0044 Japan

IMEC Kapeldreef 75, Heverlee Leuven B‐3001 Belgium

Faculty of Science and Technology and MESA+ Institute for Nanotechnology University of Twente Enschede NB 7522 The Netherlands

Faculty of Science and Engineering Waseda University 3‐4‐1 Okubo, Shinjuku‐ku Tokyo 169‐8555 Japan

School of Electrical Computer and Energy Engineering Arizona State University Tempe AZ 85287 USA

VTT Technical Research Centre of Finland Ltd. VTT P.O. Box 1000 Espoo FI‐02044 Finland

IMDEA Nanociencia Calle Faraday 9 Madrid E28049 Spain

Departament d'Enginyeria Electrònica Universitat Autònoma de Barcelona (UAB) Barcelona 08193 Spain

Department of Applied Science and Technology Politecnico di Torino C.so Duca degli Abruzzi 24 Torino 10129 Italy

Chair for Micro‐ and Nanoelectronics Department of Electrical Engineering and Information Technology TU Dortmund University Emil‐Figge‐Straße 68 D‐44227 Dortmund Germany

JARA ‐ Fundamentals for Future Information Technology 52425 Jülich Germany

Peter‐Grünberg‐Institut (PGI 7) Forschungszentrum Jülich Wilhelm‐Johnen‐Straße 52425 Jülich Germany

Funding

European Metrology Programme for Innovation and Research

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