Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt‐Dispersed SiO₂ Thin Films for ReRAM

Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.