Controllable Modification of SiC Nanowires Encapsulated in BN Nanotubes
Source abstract
Abstract
Semiconducting β-SiC nanowires encapsulated in BN nanotubes are prepared using chemical vapor deposition (see Figure). An unusual feature—a gap of 10–15 nm in width between the inner wall of the BN tube and the SiC nanowire—allows various chemical and morphological modifications to be performed on the nanowires.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Boron and Carbon Nanomaterials Research · Silicon Carbide Semiconductor Technologies · Advanced ceramic materials synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (20)
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