Graphene Based Non‐Volatile Memory Devices
Source abstract
Abstract
With the continuous advance of modern electronics, the demand for non‐volatile memory cells rapidly grows. As a promising material for post‐silicon electronic applications, graphene non‐volatile memory cells have received renewed interest due to its outstanding electronic and other physical properties. This research news briefly summarizes the recent progress in this area. Appealing research activities and technical trends are highlighted. Afterwards, requirements and aims of future graphene non‐volatile memory cells that may possibly influence their commercialization are also discussed.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Advanced Memory and Neural Computing · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronic Engineering The Chinese University of Hong Kong Shatin, NT. Hong Kong SPR China
Siyuan Lab, Department of Physics Jinan University 601 Huangpu Avenue Guangzhou Guangdong China
References (34)
Show source-provided references
1. 10.1109/5.91537410.1109/5.915374 ↗
2. 2011
3. 10.1147/rd.524.043910.1147/rd.524.0439 ↗
4. 10.1038/nmat184910.1038/nmat1849 ↗
5. 10.1038/nnano.2010.8910.1038/nnano.2010.89 ↗
6. 10.1038/nature1068010.1038/nature10680 ↗
7. 10.1088/0957-4484/23/11/11200110.1088/0957-4484/23/11/112001 ↗
8. 10.1063/1.311921510.1063/1.3119215 ↗
9. 10.1063/1.361981610.1063/1.3619816 ↗
10. 10.1021/nl203273410.1021/nl2032734 ↗
11. 10.1021/nn201809k10.1021/nn201809k ↗
12. 10.1021/nn305913610.1021/nn3059136 ↗
13. 10.1038/nmat233110.1038/nmat2331 ↗
14. 10.1021/nl801774a10.1021/nl801774a ↗
15. 10.1002/adma.20110457410.1002/adma.201104574 ↗
16. 10.1002/adma.20110047610.1002/adma.201100476 ↗
17. 10.1039/c2cs35043b10.1039/c2cs35043b ↗
18. He C. L. · Appl. Phys. Lett. · 2009 · 95
19. 10.1002/adma.20090346910.1002/adma.200903469 ↗
20. 10.1038/nnano.2012.24010.1038/nnano.2012.240 ↗
21. 10.1063/1.481326410.1063/1.4813264 ↗
22. 10.1021/nn300735s10.1021/nn300735s ↗
23. 10.1021/nl101902k10.1021/nl101902k ↗
24. 10.1021/nl100603610.1021/nl1006036 ↗
25. 10.1038/nmat202810.1038/nmat2028 ↗
26. 10.1039/c2nr30541k10.1039/c2nr30541k ↗
27. 10.1038/nature0921110.1038/nature09211 ↗
28. 10.1002/smll.20120315410.1002/smll.201203154 ↗
29. 10.1126/science.120193810.1126/science.1201938 ↗
30. Chai Y. · Electron Devices Meeting (IEDM), 2010 IEEE International · 2010
31. 10.1109/LED.2007.89545210.1109/LED.2007.895452 ↗
32. 10.1038/nnano.2013.21910.1038/nnano.2013.219 ↗
33. 10.1038/nature1238510.1038/nature12385 ↗
34. 10.1038/nature0894010.1038/nature08940 ↗