Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

Electrochemical memory (ECM) shows a marked asymmetric switching due to the different ionic energy barriers under a positive or negative voltage. The switching asymmetry can be explained by the mechanical-stress gradient aiding the CF retraction under negative erase. CF stabilization is demonstrated by increasing the program pulse width, suggesting the alleviation of the stress field through electrically induced relaxation and allowing reliable ECM storage to be achieved. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.