DataVXAdvanced MaterialsPaper
journal article·2018-07

High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer

Zhaolong Chen, Xiang Zhang, Zhipeng Dou, Tongbo Wei, Zhiqiang Liu, Yue Qi, Haina Ci, Yunyu Wang, Yang Li, Hongliang Chang, Jianchang Yan, Shenyuan Yang, Yanfeng Zhang, Junxi Wang, Peng Gao, Jinmin Li, Zhongfan Liu

Advanced Materials· Volume 30· Issue 30
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Source abstract

Abstract

Abstract Single‐crystalline GaN‐based light‐emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid‐state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high‐quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high‐brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal–organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and InxGa1−xN/GaN multiple quantum well structures. The as‐fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one‐step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high‐brightness LEDs.
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Research context

NanomaterialsMaterials processing

OpenAlex topics: GaN-based semiconductor devices and materials · Graphene research and applications · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Nanochemistry (CNC) Beijing Science and Engineering Center for Nanocarbons College of Chemistry and Molecular Engineering Peking University Beijing 100871 China

State Key Laboratory of Solid‐State Lighting Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application Beijing 100083 China

School of Microelectronics University of Chinese Academy of Sciences Beijing 101408 China

Electron Microscopy Laboratory and International Center for Quantum Materials School of Physics Peking University Beijing 100871 China

Key Laboratory for Micro‐/Nano‐Optoelectronic Devices of Ministry of Education School of Physics and Electronics Hunan University Changsha 410082 China

State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

Beijing Graphene Institute (BGI) Beijing 100095 P. R. China

Collaborative Innovation Centre of Quantum Matter Beijing 100871 China

Funding

National Natural Science Foundation of China · Beijing Municipal Science and Technology Commission · Natural Science Foundation of Beijing Municipality

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