High‐Current‐Density CuO x/InZnOx Thin‐Film Diodes for Cross‐Point Memory Applications
Source abstract
Abstract
Room-temperature-deposited CuOxInZnOx thin-film heterojunction diodes show a high current density of 3.5 × 104 A cm−2 and a high on/off current ratio of 106 (see figure). The oxide diode is a promising switch element for three-dimensional stackable memory devices, where high-temperature-prepared silicon diodes are difficult to apply.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · ZnO doping and properties · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (18)
Show source-provided references
1. 10.1063/1.183156010.1063/1.1831560 ↗
2. 10.1038/nmat161410.1038/nmat1614 ↗
3. 10.1063/1.181258010.1063/1.1812580 ↗
4. Baek I. G. · IEEE Int. Electron. Devices Meet. Tech. Dig. · 2005 · 750
5. 10.1002/adma.20060102510.1002/adma.200601025 ↗
6. 10.1109/IEDM.2004.141922810.1109/IEDM.2004.1419228 ↗
7. 10.1063/1.32824610.1063/1.328246 ↗
8. 10.1063/1.178958010.1063/1.1789580 ↗
9. 10.1063/1.12517110.1063/1.125171 ↗
10. 10.1007/s11664-006-0136-710.1007/s11664-006-0136-7 ↗
11. Sze S. M. · 2007
12. 10.1002/adfm.20040004610.1002/adfm.200400046 ↗
13. 10.1016/0167-577X(87)90098-X10.1016/0167-577X(87)90098-X ↗
14. 10.1103/PhysRevB.52.143310.1103/PhysRevB.52.1433 ↗
15. 10.1116/1.58188810.1116/1.581888 ↗
16. 10.1002/pssa.20062213710.1002/pssa.200622137 ↗
17. 10.1134/S106378500602013110.1134/S1063785006020131 ↗
18. Ahn S.‐E. · Adv. Mater.