Phosphorene/ZnO Nano‐Heterojunctions for Broadband Photonic Nonvolatile Memory Applications

Abstract High‐performance photonic nonvolatile memory combining photosensing and data storage with low power consumption ensures the energy efficiency of computer systems. This study first reports in situ derived phosphorene/ZnO hybrid heterojunction nanoparticles and their application in broadband‐response photonic nonvolatile memory. The photonic nonvolatile memory consistently exhibits broadband response from ultraviolet (380 nm) to near infrared (785 nm), with controllable shifts of the SET voltage. The broadband resistive switching is attributed to the enhanced photon harvesting, a fast exciton separation, as well as the formation of an oxygen vacancy filament in the nano‐heterojunction. In addition, the device exhibits an excellent stability under air exposure compared with reported pristine phosphorene‐based nonvolatile memory. The superior antioxidation capacity is believed to originate from the fast transfer of lone‐pair electrons of phosphorene. The unique assembly of phosphorene/ZnO nano‐heterojunctions paves the way toward multifunctional broadband‐response data‐storage techniques.