Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal‐Oxide‐Metal System
Source abstract
Abstract
We experimentally demonstrate and present an analytical model for a nanoscale metal/oxide/metal device that simultaneously exhibits memristance, based on oxygen vacancy drift, and current-controlled negative differential resistance, based on a metal-insulator transition instability. We show that this oxide nanodevice can be used to fabricate a continuously tunable voltage-controlled oscillator.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neural Networks and Reservoir Computing · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (39)
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