journal article·2015-10

Multilevel Conductance Switching of a Memory Device Induced by Enhanced Intermolecular Charge Transfer

Qian‐Feng Gu, Jing‐Hui He, Dong‐Yun Chen, Hui‐Long Dong, You‐Yong Li, Hua Li, Qing‐Feng Xu, Jian‐Mei Lu

Advanced Materials· Volume 27· Issue 39
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Abstract

The modification of the terminal electron-donating groups induces a critical change in molecular aggregation and the intermolecular charge-transfer effect of the symmetric D–A1–A2–A1–D molecules that correlate with an addressable variation of memory performance from binary to ternary. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
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Research context

OpenAlex topics: Organic Electronics and Photovoltaics · Perovskite Materials and Applications · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Chemistry Chemical Engineering and Materials Science Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou 215123 China

Functional Nano and Soft Materials Laboratory (FUNSOM) and Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices Soochow University Suzhou 215123 China

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