Piezotronic Effect on the Transport Properties of GaN Nanobelts for Active Flexible Electronics
Source abstract
Abstract
The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications
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References (23)
Show source-provided references
1. 10.1143/JJAP.32.L810.1143/JJAP.32.L8 ↗
2. 10.1126/science.112400510.1126/science.1124005 ↗
3. 10.1126/science.113936610.1126/science.1139366 ↗
4. 10.1016/j.nanoen.2012.01.00210.1016/j.nanoen.2012.01.002 ↗
5. 10.1002/anie.20110419710.1002/anie.201104197 ↗
6. 10.1021/nl061802g10.1021/nl061802g ↗
7. 10.1002/adma.20060291810.1002/adma.200602918 ↗
8. 10.1002/adma.20060190810.1002/adma.200601908 ↗
9. 10.1063/1.274809710.1063/1.2748097 ↗
10. 10.1021/ja909863a10.1021/ja909863a ↗
11. 10.1088/0957-4484/22/47/47540110.1088/0957-4484/22/47/475401 ↗
12. 10.1016/j.nanoen.2011.12.00710.1016/j.nanoen.2011.12.007 ↗
13. 10.1063/1.217736210.1063/1.2177362 ↗
14. 10.1002/adfm.20060047510.1002/adfm.200600475 ↗
15. 10.1063/1.9286310.1063/1.92863 ↗
16. 10.1166/jnn.2008.N0410.1166/jnn.2008.N04 ↗
17. 10.1021/nl802367t10.1021/nl802367t ↗
18. 10.1063/1.168939210.1063/1.1689392 ↗
19. 10.1088/1367-2630/4/1/36410.1088/1367-2630/4/1/364 ↗
20. 10.1063/1.275714910.1063/1.2757149 ↗
21. 10.1021/jz100330j10.1021/jz100330j ↗
22. 10.1063/1.220074210.1063/1.2200742 ↗
23. Wang Z. L. · Adv. Mater. · 2012