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journal article·2020-03Open access

Synthesis of Co‐Doped MoS2 Monolayers with Enhanced Valley Splitting

Jiadong Zhou, Junhao Lin, Hunter Sims, Chongyun Jiang, Chunxiao Cong, John A. Brehm, Zhaowei Zhang, Lin Niu, Yu Chen, Yao Zhou, Yanlong Wang, Fucai Liu, Chao Zhu, Ting Yu, Kazu Suenaga, Rohan Mishra, Sokrates T. Pantelides, Zhen‐Gang Zhu, Weibo Gao, Zheng Liu, Wu Zhou

Advanced Materials· Volume 32· Issue 11
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Source abstract

Abstract

Abstract Internal magnetic moments induced by magnetic dopants in MoS2 monolayers are shown to serve as a new means to engineer valley Zeeman splitting (VZS). Specifically, successful synthesis of monolayer MoS2 doped with the magnetic element Co is reported, and the magnitude of the valley splitting is engineered by manipulating the dopant concentration. Valley splittings of 3.9, 5.2, and 6.15 meV at 7 T in Co‐doped MoS2 with Co concentrations of 0.8%, 1.7%, and 2.5%, respectively, are achieved as revealed by polarization‐resolved photoluminescence (PL) spectroscopy. Atomic‐resolution electron microscopy studies clearly identify the magnetic sites of Co substitution in the MoS2 lattice, forming two distinct types of configurations, namely isolated single dopants and tridopant clusters. Density functional theory (DFT) and model calculations reveal that the observed enhanced VZS arises from an internal magnetic field induced by the tridopant clusters, which couples to the spin, atomic orbital, and valley magnetic moment of carriers from the conduction and valence bands. The present study demonstrates a new method to control the valley pseudospin via magnetic dopants in layered semiconducting materials, paving the way toward magneto‐optical and spintronic devices.
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Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Advanced Photocatalysis Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore

National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba 305–8565 Japan

Department of Physics Southern University of Science and Technology Shenzhen 518055 China

Department of Physics and Astronomy Vanderbilt University Nashville TN 37235 USA

Materials Science and Technology Division Oak Ridge National Lab Oak Ridge TN 37831 USA

Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore

College of electronic information and optical engineering Nankai University Tianjin 300350 China

State Key Laboratory of ASIC & System School of Information Science and Technology Fudan University Shanghai 200433 P. R. China

Department of Mechanical Engineering and Materials Science and Institute of Materials Science and Engineering Washington University in St. Louis St. Louis MO 63130 USA

School of Electronic Electrical and Communication Engineering University of Chinese Academy of Science Beijing 100049 China

CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of Sciences Beijing 100049 China

Centre for Micro‐/Nano‐electronics (NOVITAS) School of Electrical & Electronic Engineering Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore

CINTRA CNRS/NTU/THALES UMI 3288 Research Techno Plaza 50 Nanyang Drive, Border X Block, Level 6 Singapore 637553 Singapore

School of Physical Sciences and CAS Key Laboratory of Vacuum Sciences University of Chinese Academy of Sciences Beijing 100049 China

Funding

National Research Foundation Singapore · National Science Foundation, United Arab Emirates · National Basic Research Program of China · National Natural Science Foundation of China · U.S. Department of Energy · National Science Foundation

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