Giant Electrostriction in Gd‐Doped Ceria
Source abstract
Abstract
Gd-doped CeO(2) exhibits an anomalously large electrostriction effect generating stress that can reach 500 MPa. In situ XANES measurements indicate that the stress develops in response to the rearrangement of cerium-oxygen vacancy pairs. This mechanism is fundamentally different from that of materials currently in use and suggests that Gd-doped ceria is a representative of a new family of high-performance electromechanical materials.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advancements in Solid Oxide Fuel Cells · Magnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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