On improvement of films growth from gas with natural convection and chemical interaction

In this paper, the authors introduce an analytical approach for the analysis of mass and heat transfer during the growth of film in reactors for gas-phase epitaxy. The epitaxial processes were analyzed with natural convection and possibility of changing the rate of chemical interaction between reagents. As a result of the analysis, the authors obtained conditions on physical and technological parameters for increasing the homogeneity of the grown epitaxial layers. The authors compare growth regimes at normal and low pressure of reagents and gas-carrier. The authors also analyzed dependences of properties of epitaxial layers on the frequency of rotation of substrate holder, on the diffusion coefficients of reagents, on the kinematic viscosity and on the input velocity. The authors compared their results of calculation with recently obtained experimental data and obtained enough good agreement. All analytical results without experimental verification have been checked by numerical simulation with using independent approaches.