Ga2Te3Sb5—A Candidate for Fast and Ultralong Retention Phase‐Change Memory
Source abstract
Abstract
Incongruent melting phenomenon shows the feasibility of multilevel control using the phase-change material Ga2Te3Sb5 (Ga-TS). Electrical results showed that Ga-TS cells require 25% less RESET current than do GST cells. Meanwhile it possesses a high programming speed, ultralong data retention extrapolated to one million years at 120 °C, and superior thermal properties for phase-change random-access-memory applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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