Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light‐Emitting Diode by Localized Surface Plasmons
Source abstract
Abstract
The electroluminescence intensity of a silicon quantum dot (Si QD) light-emitting diode (LED) with an Ag layer containing Ag particles can be enhanced by 434% relative to a Si QD LED without an Ag layer. The large enhancement is attributed to an increase in radiative quantum efficiency as a result of coupling between Si QDs and localized surface plasmons and increased current injection efficiency through improved carrier tunneling into Si QDs.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Plasmonic and Surface Plasmon Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (32)
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