journal article·2007-11-19Open access

Photoswitches and Memories Assembled by Electrospinning Aluminum‐Doped Zinc Oxide Single Nanowires

D. D. Lin, H. Wu, W. Pan

Advanced Materials· Volume 19· Issue 22

Abstract

Electrically bistable polycrystalline nanowires are obtained by a simple electrospinning process. Two-terminal single nanowire devices that can be prepared by aligning individual AZO nanowires across paired Au electrodes are demonstrated (see figure). These AZO/gold junctions exhibited photoconductive resistance switching and electrically bistable characteristics at room temperature, indicating their potential applications as photodiodes and memories.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Transition Metal Oxide Nanomaterials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (38)

Show source-provided references
1. 10.1063/1.88265810.1063/1.882658 ↗
2. 10.1038/3505104710.1038/35051047 ↗
3. 10.1021/nl052239p10.1021/nl052239p ↗
4. 10.1002/1521-4095(20020116)14:2<158::AID-ADMA158>3.0.CO;2-W10.1002/1521-4095(20020116)14:2<158::AID-ADMA158>3.0.CO;2-W ↗
5. 10.1002/smll.20050053310.1002/smll.200500533 ↗
6. 10.1039/b401804b10.1039/b401804b ↗
7. 10.1063/1.214998010.1063/1.2149980 ↗
8. 10.1002/1521-4095(200101)13:1<70::AID-ADMA70>3.0.CO;2-H10.1002/1521-4095(200101)13:1<70::AID-ADMA70>3.0.CO;2-H ↗
9. Jayaraman K. · J. Nanosci. Nanotechnol. · 2004 · 4 · 52
10. 10.1002/adma.20040013310.1002/adma.200400133 ↗
11. 10.1016/j.cplett.2005.11.04010.1016/j.cplett.2005.11.040 ↗
12. Jeong M. C. · Appl. Phys. Lett. · 2006 · 88 · 20
13. 10.1038/nmat138710.1038/nmat1387 ↗
14. 10.1126/science.111649510.1126/science.1116495 ↗
15. 10.1063/1.165132810.1063/1.1651328 ↗
16. 10.1016/j.cplett.2004.02.04510.1016/j.cplett.2004.02.045 ↗
17. 10.1063/1.164531910.1063/1.1645319 ↗
18. 10.1063/1.158873510.1063/1.1588735 ↗
19. 10.1021/jp036720k10.1021/jp036720k ↗
20. 10.1021/ja055919310.1021/ja0559193 ↗
21. 10.1021/nl034425610.1021/nl0344256 ↗
22. Li D. · Adv. Mater. · 2004 · 16 · 362
23. 10.1002/app.2429010.1002/app.24290 ↗
24. 10.1063/1.150908310.1063/1.1509083 ↗
25. C. Kittel Introduction to Solid State Physics Wiley New York NJ1996.
26. 10.1063/1.159514710.1063/1.1595147 ↗
27. 10.1063/1.155899410.1063/1.1558994 ↗
28. 10.1063/1.37219410.1063/1.372194 ↗
29. 10.1021/jp027105410.1021/jp0271054 ↗
30. 10.1063/1.175620510.1063/1.1756205 ↗
31. 10.1063/1.176586110.1063/1.1765861 ↗
32. 10.1063/1.188371110.1063/1.1883711 ↗
33. B. Y. Tsui C. L. Weng J. H. Wei M. J. Tsai International Symposium on VLSI Technology Systems and Applications (VLSI‐TSA)(IEEECat. No. 06TH8891)2006 p. 86.
34. 10.1063/1.175418710.1063/1.1754187 ↗
35. 10.1063/1.165302410.1063/1.1653024 ↗
36. 10.1063/1.12690210.1063/1.126902 ↗
37. 10.1007/BF0102199410.1007/BF01021994 ↗
38. 10.1111/j.1551-2916.2005.00735.x10.1111/j.1551-2916.2005.00735.x ↗