Universal Electric‐Field‐Driven Resistive Transition in Narrow‐Gap Mott Insulators
Source abstract
Abstract
A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Electronic and Structural Properties of Oxides · Nonlinear Dynamics and Pattern Formation
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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