A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non‐Volatile Memory Devices
Source abstract
Abstract
A light incident angle selectivity of a memory device is demonstrated. As a model system, the ZnO resistive switching device has been selected. Electrical signal is reversibly switched between memristor and resistor behaviors by modulating the light incident angle on the device. Moreover, a liquid passivation layer is introduced to achieve stable and reversible exchange between the memristor and WORM behaviors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering POSTECH (Pohang University of Science and Technology) Pohang 790–784 Korea
Advanced Device Laboratory Samsung Advanced Institute of Technology Yongin Gyeonggi‐do 446–712 Korea
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