Ambipolar Memory Devices Based on Reduced Graphene Oxide and Nanoparticles
Source abstract
Abstract
A directed-assembly method on the basis of graphene oxide (GO) pieces is developed, which allowed us to mass-produce a uniform array of graphene-based ambipolar memory devices using only conventional microfabrication facilities. Significantly, we successfully demonstrated that this device can be operated as both conventional conductivity-switching memory and new type-switching memory by adjusting the charge density on the nanoparticles.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Advanced Memory and Neural Computing · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (24)
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