Si Nanowire Bridges in Microtrenches: Integration of Growth into Device Fabrication
Source abstract
Abstract
Silicon nanowire bridges are grown in prefabricated microtrenches on (110) silicon-on-insulator wafers (see Figure). Silicon trenches are used as substrates during growth and probing electrodes after growth. This way, nanowire growth and device fabrication can be achieved simultaneously, providing a simple and rational way to realize nanowire-based integrated circuits.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Nanowire Synthesis and Applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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