The band gap bowing of CdS x Te1−x alloys beyond the virtual crystal approximation
Source abstract
Abstract
The effect of alloy disorder on direct and indirect band gap energies in CdS x Te1−x semiconducting alloys has been investigated. The calculations are performed using a pseudopotential approach within the virtual crystal approximation (VCA). In the simplest approximation based on the VCA, the fundamental band gap bowing of CdS x Te1−x is found to be in disagreement with that of the experiment. The value of this bowing is highly improved by taking into account the compositional disorder effect (i.e. going beyond the VCA).
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials · Quantum Dots Synthesis And Properties
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Affiliations
Laboratory of Materials Physics and Its Applications, Physics Department, Faculty of Science, University of M’sila, M’sila, Algeria
Department of Informatics, Faculty of Computer Science and Mathematics, University of Bordj-Bou-Arréridj, Bordj-Bou-Arréridj, Algeria; Laboratory of Materials Physics and Its Applications, Physics Department, Faculty of Science, University of M’sila, M’sila, Algeria
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