Graphene‐Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaO_{x} Based Memristive Devices

Michael Lübben; Panagiotis Karakolis; Vassilios Ioannou‐Sougleridis; Pascal Normand; Panagiotis Dimitrakis; Ilia Valov

doi:10.1002/adma.201502574

journal article·2015-10

Graphene‐Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaO_x Based Memristive Devices

Michael Lübben, Panagiotis Karakolis, Vassilios Ioannou‐Sougleridis, Pascal Normand, Panagiotis Dimitrakis, Ilia Valov

Advanced Materials· Volume 27· Issue 40

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Source abstract

Abstract

By modification of the electrode-solid-electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta2 O5 /Pt is demonstrated, thus, bridging both mechanisms. The ECM operation is discussed in the light of Ta-cation mobility in TaOx . The crucial role of electrochemical processes and moisture in the resistive switching process is also highlighted.

Source: openalex_inverted_index · Quality: baseline

Research context

Energy storage Nanomaterials

OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Peter Grünberg Institute (Electronic Materials ‐ PGI‐7) Forschungszentrum Jülich 52425 Jülich Germany

Institute of Nanoscience and Nanotechnology NCSR Demokritos 15310 Athens Greece

Funding

Greek-German bilateral joint research project

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