Preparation and characterization of ZnIn2S4 thin film
Source abstract
Abstract
ZnIn2S4 (ZIS) crystalline thin film was prepared by novel spray pyrolysis technique. The as-deposited ZIS film was characterized by X-ray diffraction technique, ultraviolet–visible–near infrared spectroscopy, field emission scanning electron microscopy and energy dispersive analysis by X-rays. X-ray diffraction pattern revealed the crystalline nature of the material. Absorption edge was found to be 471 nm. Direct band gap of the film was calculated and found to be 2·68 eV. The absorption coefficient of the ZIS film exhibits the maximum value of 5·3 × 106 cm−1. The as-deposited ZIS composition was nearly stoichiometric.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
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Affiliations
Research Scholar, Department of Physics, Avinashilingam Institute for Home Science and Higher Education for Women, Coimbatore, Tamil Nadu, India
Professor, Department of Physics, Avinashilingam Institute for Home Science and Higher Education for Women, Coimbatore, Tamil Nadu, India
Assistant Professor, Department of Physics, Avinashilingam Institute for Home Science and Higher Education for Women, Coimbatore, Tamil Nadu, India
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