journal article·2002-01-16

A Strategic Two-Stage Low-Temperature Thermal Processing Leading to Fully Dense and Fine-Grained Doped-ZnO Varistors

P. Durán, F. Capel, J. Tartaj, C. Moure

Advanced Materials· Volume 14· Issue 2
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Abstract

Fully dense doped-ZnO varistors with sub- micrometer grain size (see Figure for a TEM image) can be fabricated by a strategic two-stage, one-cycle, thermal processing method at temperatures as low as 825 °C. The nonlinear coefficients α of such fully dense varistors are as high as 270, which is more than one order of magnitude higher than those currently given for commercial ZnO varistors.
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Research context

OpenAlex topics: ZnO doping and properties · Thin-Film Transistor Technologies · Transition Metal Oxide Nanomaterials

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