ZnO:GaN thin films for photoelectrochemical water splitting application
Source abstract
Abstract
ZnO and mixed ZnO:GaN thin films were synthesized on fluorine-doped tin oxide substrates by reactive radio frequency magnetron sputtering in mixed N2 and O2 ambient. Mixed ZnO:GaN films exhibited better crystallinity compared to ZnO film and bandgap narrowing was observed for mixed ZnO:GaN thin films. The n-type conductivity is revealed for both ZnO and ZnO:GaN thin films by Mott-Schottky plots as well as photocurrent polarity in current-voltage (I-V) analysis. ZnO:GaN thin films exhibited improved photocurrents than ZnO films. Our results suggest a potential method for synthesizing heterogeneous photocatalysts with both high crystallinity and bandgap reduction, which should help to improve their photoelectrochemical performance.
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Research context
OpenAlex topics: Advanced Photocatalysis Techniques · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National Renewable Energy Laboratory, Golden, CO, USA
New Jersey Institute of Technology, Newark, NJ, USA
References (20)
Show source-provided references
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