journal article·2014-07

Peel strength of sputtered FCCL(Flexible Copper Clad Laminate) using Ar:O2 mixed gas preprocessing and a Ni-Cr seed layer

Woo-Young Ahn, Joong Soon Jang

Electronic Materials Letters· Volume 10· Issue 4
Publisher page

Abstract

The PI surface was modified with ion beams in a vacuum chamber to increase the surface area. A two-way Design of Experiments (“DOE”) was performed by varying the DC power and changing the proportion of O2 gas with respect to the Ar reactive gas and measuring the peel strength between the PI layer and the plated Cu layer. The results showed that increasing the voltage level and applying mixed Ar-O2 gas makes the PI surface substantially rough, which increases the Van der Waals force as well as the chemical bonding strength. Using the oxygen gas makes the amorphous structure in the Cu layer sputtered. However, Cu plating with a high electrical current may remedy this, resulting in a good crystalline direction. It was also found that reducing the proportion of Cr in the Ni-Cr seed layer incurs a great decrease in the peel strength after the reflow process, although it requires just one etching.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Metal and Thin Film Mechanics · Copper Interconnects and Reliability · Electronic Packaging and Soldering Technologies

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References (24)

Show source-provided references
1. A. Choukourov and H. Biederman, Science Direct. 81, 517 (2006).
2. C. H. Yang and T. C. Lin, Appl. Surf. Sci. 252, 1818 (2005).10.1016/j.apsusc.2005.03.182 ↗
3. E. H. Lee and L. K. Manser, J. Mater. Res. 6, 610 (1991).10.1557/JMR.1991.0610 ↗
4. M. Kitoh and Y. Honda, Thin Solid Films 271, 92 (1995).10.1016/0040-6090(95)06697-7 ↗
5. K. Yamanaka and N. Inagaki, Packaging and Manufacturing Technology 1, 5 (2011).10.1109/TCPMT.2010.2102352 ↗
6. W. J. Lee and K. K. Jee, Solid State Phenomenon. 124–126, 1593 (2007).10.4028/www.scientific.net/SSP.124-126.1593 ↗
7. H. J. Kim and Y. T. Hong, J. Ind. Eng. Chem. 15, 23 (2009).10.1016/j.jiec.2008.08.016 ↗
8. W. K. Choi and D. H. Park, Surf. Coat. Technol. 203, 2739 (2009).10.1016/j.surfcoat.2009.02.123 ↗
9. T. G. Woo and K. W. Seol, Met. Mater. Int. 17, 789 (2011).10.1007/s12540-011-1015-1 ↗
10. T. G. Woo and K. W. Seol, Electron. Mater. Lett. 8, 2 (2012).
11. V. G. Kotnur and G. C. A. M. Janssen, Surf. Coat. Technol. 222, 44 (2013).10.1016/j.surfcoat.2013.01.058 ↗
12. H. J. Anklam, Thin Solid Films 121, 61 (1984).10.1016/0040-6090(84)90525-X ↗
13. Z. Jicheng and Y. Jianwu, J. Wuhan Univ. of Tech-Mater. Sci. Ed. (2008).
14. B. I. Noh and S. B. Jung, Met. Mater. Int. 16, 779 (2010).10.1007/s12540-010-1013-8 ↗
15. B. I. Noh and S. B. Jung, J. Mater Sci. Mater Electron. 22, 790 (2011).10.1007/s10854-010-0213-9 ↗
16. Y. H. Chi and S. G. Pyo, Electron. Mater. Lett. 9, 4 (2013).
17. “IPC-TM-650 Test Methods Manual”, the Institute for Interconnecting and Packaging Electronic Circuits 2215 Sanders Road Northbook, IL 60062-6135.
18. J. W. Lee and S. H. Kim, J. Korea Inst. Surf. Eng. 38, 2 (2005).
19. S. C. Choi and J. K. Han, J. Korean Soc. Precision Eng. 25, 32 (2008).
20. H. L. Park and J. B. Moon, J. Kosos 20, 94 (2005).
21. H. W. Choi and W. K. Choi, The Korean Institute of Surface Engineering Conference A, p. 4 (2007).
22. J. W. Lee and S. H. Kim, J. Korean Inst. Surf. Eng. 38, 2 (2005).
23. S. C. Choi and J. G. Han, J. Korean Soc. Precision Eng. 25, 3 (2008).
24. Y. R. Hwang and S. H. Kim, The Korean Institute of Surface Engineering Conference, p. 166 (2007).