Study on the structural and optical properties of Cd1−x Zn x O layers enhanced by rapid thermal annealing
Source abstract
Abstract
Cd1-x Zn x O alloy layers were grown by a radio-frequency magnetron co-sputtering system. By X-ray diffraction measurement, the Cd1-x Zn x O layers were observed to have a single-phase cubic structure at x ≤ 0.21. However, polycrystalline having mixed phases was observed at x = 0.29. It seems that the high miscibility of Zn flux in CdO leads to a large fluctuation in phase segregation caused by the hexagonal ZnO and cubic CdO structure within CdZnO. Therefore, the maximum Zn-composition ratio without phase segregation was found to be x = 0.21. The bandgap energies of the Cd1−x Zn x O layers between x = 0 and x = 0.21 were distributed from 2.574 eV to 2.892 eV, respectively, while the bandgap energy of x = 0.29 was a slightly smaller value of 2.834 eV. After rapid-thermal-annealing (RTA) treatment at 600°C, the bandgap energies of each x component decreased, especially the x = 0.29 layer, which converted into the double phase of a cubic-and-hexagonal structure existing in the cubic CdO (111) and hexagonal ZnO (0001) phases. Consequently, reliable formation and crystallinity improvement of the Cd1−x Zn x O layers were achieved through an x composition ratio below x = 0.29 and an RTA method of short-time thermal-annealing below 600°C.
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Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (18)
Show source-provided references
1. M. V. Schneider, B. S. T. J. 45, 1611 (1966).
2. M. Ortega, G. Santana and A. Morales-Acevedo, Solid-State Electronics 44, 1765 (2000).10.1016/S0038-1101(00)00123-4 ↗
3. T. Chen, Q. J. Liu, Z. L. Zhou and Y. D. Wang, Nanotechnology 19, 095506 (2008).10.1088/0957-4484/19/9/095506 ↗
4. B. Y. Oh, M. C. Jeong, T. H. Moon, W. Lee, J. M. Myoung, J. Y. Hwang and D. S. Seo, J. Appl. Phys. 99, 124505 (2006).10.1063/1.2206417 ↗
5. R. Kondo, H. Okimura and Y. Sakai, Jpn. J. Appl. Phys. 10, 1547 (1971).10.1143/JJAP.10.1547 ↗
6. C. H. Champness and C. H. Chan, Sol. Energy Mater. Sol. Cells. 37, 75 (1995).10.1016/0927-0248(94)00199-5 ↗
7. F. A. Benko and F. P. Koffyberg, Solid State Commun. 57, 901 (1986).10.1016/0038-1098(86)90920-8 ↗
8. P. R. Potil, P. S. Potil and C. D. Lokhande, Ind. J. Phys. 226, 14 (1995).
9. M. G. Ambia, M. N. Eslam and M. O. Hakim, Sol. Energy Mat. Sol. Cells 28, 103 (1992).10.1016/0927-0248(92)90002-7 ↗
10. M. Yan, M. Lane, C. R. Kannewurf and R. P. H. Chang, Appl. Phys. Lett. 78, 02342 (2001).10.1063/1.1365410 ↗
11. C. C. Wu, C. I. Wu, J. C. Sturm and A. Kahn, Appl. Phys. Lett. 70, 1348 (1997).10.1063/1.118575 ↗
12. H. Kobayashi, T. Ishida, Y. Nakato and H. Tsubomura, J. Appl. Phys. 69, 1736 (1991).10.1063/1.347220 ↗
13. K. J. Byeon, S. Y. Hwang and H. Lee, Microelectron. Eng. 85, 830 (2008).10.1016/j.mee.2007.12.078 ↗
14. D. W. Ma, Z. Z. Ye, J. Y. Huang, L. P. Zhu, B. H. Zhao and J. H. He, Mater. Sci. Eng. B 111, 9 (2004).10.1016/j.mseb.2003.12.007 ↗
15. G. Santana, A. Morales-Acevedo, O. Vigil, F. Cruz, G. Contreras-Puente and L. Vaillant, Superficies y Vacio 9, 300 (1999).
16. S. Shigemori, A. Nakamura, J. Ishihara, T. Aoki and J. Temmyo, Jpn. J. Appl. Phys. Part 2 43, L1088 (2004).10.1143/JJAP.43.L1088 ↗
17. S. Sadofev, S. Blumstengel. J. Cui, J. Puls, S. Rogaschewki, P. Schäfer and F. Henneberger, Appl. Phys. Lett. 89, 201907 (2006).10.1063/1.2388250 ↗
18. K. Sakurai, T. Takagi, T. Kubo, D. Kajita, T. Tanabe, H. Takasu, Sz. Fujita and Sg. Fujita, J. Cryst. Growth 237–239, 514 (2002).10.1016/S0022-0248(01)01954-6 ↗