Schottky nature of InSe/Cu thin film diode prepared by sequential thermal evaporation
Source abstract
Abstract
Highly oriented indium selenide (InSe) thin films were prepared by sequential thermal evaporation on tungsten (W) substrate and subsequently annealed at 300°C for 30 min in argon (Ar) atmosphere. The films were characterized by Glancing Incidence x-ray diffraction (GI-XRD), scanning electron microscopy (SEM), Energy dispersive x-ray analysis (EDX), Diffused reflectance spectroscopy (DRS) and current-voltage (I–V) measurements. Highly crystalline InSe thin film was obtained after annealing and confirmed by XRD analysis. Band gap energy of the InSe system is deduced from the DRS measurements and found to be 1.3 eV. SEM analysis revealed that selenium (Se) content plays an important role in determining the surface morphology of the film. InSe thin film diode structure was fabricated as W/InSe/Cu system. The estimated values of barrier height for the film of thickness 3000 A and 7000 A are 0.65 eV and 0.61 eV respectively. Thickness dependent schottky nature of the InSe/Cu thin film diode is discussed in detail.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces · Solid-state spectroscopy and crystallography
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References (13)
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