Raman and photoluminescence properties of type II GaSb/GaAs quantum dots on (001) Ge substrate
Source abstract
Abstract
We investigate structural Raman and photoluminescence properties of type II GaSb/GaAs quantum dots (QDs) grown on (001) Ge substrate by molecular beam epitaxy. Array of self-assembled GaSb QDs having an areal density of ∼1.66 × 1010 dots/cm2 is obtained by a growth at relatively low substrate temperature (450 °C) on a GaAs surface segmented into anti-phase domains (APDs). Most of QDs form in one APD area. However, a few QDs can be observed at the APD boundaries. Raman spectroscopy is used to probe the strain in GaAs layer. Slight redshift of both LO and TO GaAs peaks are observed when GaSb QDs are buried into GaAs matrix. Optical properties of capped QDs are characterized by photoluminescence measurement at low temperatures (20 K and 30 K). Emission peaks of GaSb/GaAs QDs are found in the range of 1.0-1.3 eV at both temperatures. Slight redshift is observed when the laser excitation power is increased at 20 K while blueshift of QD peak is observed at 30 K. We attribute this abnormal behavior to the contribution of overlapped GaSb wetting layer peak in the PL emission as well as the feature of type II band structure.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Semiconductor Lasers and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (20)
Show source-provided references
1. Y. Okada, N. J. Ekins-Daukes, T. Kita, R. Tamaki, M. Yoshida, A. Pusch, O. Hess, C. C. Philips, D. J. Farrell, K. Yoshida, N. Ahsan, Y. Shoji, T. Sogabe, and J.-F. Guillemoles, Appl. Phys. Rev. 2, 0021302 (2015).10.1063/1.4916561 ↗
2. K. Laouthaiwattana, O. Tangmattajittakul, S. Suraprapapich, S. Thainoi, P. Changmuang, S. Kanjanachuchai, S. Ratanathamaphan, and S. Panyakeow, Sol. Energ. Mat. Sol. C. 93, 746 (2009).10.1016/j.solmat.2008.09.020 ↗
3. S. Kiravittaya, U. Manmontri, S. Sopitpan, S. Ratanathammaphan, C. Antarasen, M. Sawadsaringkarn, and S. Panyakeow, Sol. Energ. Mat. Sol. C. 68, 89 (2001).10.1016/S0927-0248(00)00347-0 ↗
4. P. J. Carrington, A. S. Mahajumi, M. C. Wagener, J. R. Botha, Q. Zhuang, and A. Krier, Physica B 407, 1493 (2012).10.1016/j.physb.2011.09.069 ↗
5. F. Xu, X.-G. Yang, S. Luo, Z.-R. Lv, and T. Yang, J. Appl. Phys. 116, 133102 (2014).10.1063/1.4895476 ↗
6. W. Tantiweerasophon, S. Thainoi, P. Changmuang, S. Kanjanachuchai, S. Rattanathammaphan, and S. Panyakeow, J. Cryst. Growth 323, 254 (2010).10.1016/j.jcrysgro.2010.12.083 ↗
7. M. Kunrugsa, S. Kiravittaya, S. Sopitpan, S. Ratanathammaphan, and S. Panyakeow, J. Cryst. Growth 401, 441 (2014).10.1016/j.jcrysgro.2014.02.048 ↗
8. M. Bosi and G. Attolini, Prog. Cryst. Growth Ch. 56, 146 (2010).10.1016/j.pcrysgrow.2010.09.002 ↗
9. L. Lazzarini, L. Nazi, G. Salviati, C. Z. Fregonara, Y. Li, L. J. Gilling, C. Hardingham, and D. B. Holt, Micron 31, 217 (2000).10.1016/S0968-4328(99)00086-4 ↗
10. M. Hayne, R. J. Young, E. P. Smakman, T. Nowozin, P. Hodgson, J. K. Garleff, P. Rambabu, P. M. Koenraad, A. Marent, L. Bonato, A. Schliwa, and D. Bimberg, J. Phys. D 46, 264001 (2013).10.1088/0022-3727/46/26/264001 ↗
11. K. Yamaguchi, S. Tsukamoto, and K. Matsuda, Handbook of Self Assembled Semiconductor Nanostructure for Novel Devices in Photonics and Electronics (Chapter 8), p. 271, Z. Wang (Ed.) (2008).10.1016/B978-0-08-046325-4.00008-6 ↗
12. J. Oh and J. C. Campbell, Mater. Sci. Semicond. Process. 13, 185 (2010).10.1016/j.mssp.2010.10.009 ↗
13. K. Reginski, J. Muszalski, V. V. Preobrazhenskii, and D. I. Lubyshev, Thin Solid Films 267, 54 (1995).10.1016/0040-6090(95)06665-9 ↗
14. E. P. Smakman, J. K. Garleff, R. J. Young, M. Hayne, P. Rambabu, and P. M. Koenraad, Appl. Phys. Lett. 100, 142116 (2012).10.1063/1.3701614 ↗
15. D. Kohen, S. Bao, K. H. Lee, K. E. K. Lee, C. S. Tan, S. F. Yoon, and E. A. Fitzgerald, J. Cryst. Growth 421, 58 (2015).10.1016/j.jcrysgro.2015.04.003 ↗
16. A. Ito, M. Ichimura, A. Usami, T. Wada, and H. Kano, J. Appl. Phys. 72, 2531 (1992).10.1063/1.351551 ↗
17. K. Suzuki and Y. Arakawa, J. Cryst. Growth 201/202, 1205 (1999).10.1016/S0022-0248(99)00021-4 ↗
18. C. Jiang and H. Sakaki, Physica E 26, 180 (2005).10.1016/j.physe.2004.08.048 ↗
19. F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, and Z. I. Alferov, Phys. Rev. B 57, 4635 (1998).10.1103/PhysRevB.57.4635 ↗
20. S. Kiravittaya, T. Poempool, S. Thainoil, S. Kanjanachuchai, S. Ratanathammaphan, and S. Panyakeow, ECTICON (2016). (accepted)