Thermoelectric Properties in Fermi Level Tuned Topological Materials (Bi1−xSnx)2Te3
Source abstract
Abstract
We investigated the thermoelectric properties of Sn-doped (Bi1−xSnx)2Te3 (x = 0, 0.1, 0.3, 0.5, and 0.7%) compounds, which is known as topological insulators. Fermi level tuning by Sn-doping can be justified by the n- to p-type transition with increasing Sn-doping concentration, as confirmed by Seebeck coefficient and Hall coefficient. Near x = 0.3 and 0.5%, the Fermi level resides inside the bulk band gap, resulting in a low Seebeck coefficient and increase of electrical resistivity. The magnetoconductivity with applying magnetic field showed weak antilocalization (WAL) effect for pristine Bi2Te3 while Sn-doped compounds do not follow the WAL behavior of magneto-conductivity, implying that the topological surface Dirac band contribution in magneto-conductivity is suppressed with decreasing the Fermi level by Sn-doping. This research can be applied to the topological composite of p-type/n-type topological materials by Fermi level tuning via Sn-doping in Bi2Te3 compounds.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Topological Materials and Phenomena · Advanced Thermoelectric Materials and Devices · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (34)
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1. Greenaway, D.L., Harbeke, G.: Band structure of bismuth telluride, bismuth selenide and their respective alloys. J. Phys. Chem. Solids 26, 1585 (1965)10.1016/0022-3697(65)90092-2 ↗
2. Wu, F., Shi, W., Hu, X.: Preparation and thermoelectric properties of flower-like nanoparticles of Ce-doped Bi2Te3. Electron. Mater. Lett. 11, 127 (2015)10.1007/s13391-014-4139-x ↗
3. Kim, H., Lee, J.K., Park, S.-D., Ryu, B., Lee, J.E., Kim, B.-S., Min, B.-K., Joo, S.-J., Lee, H.-W., Cho, Y.-R.: Enhanced thermoelectric properties and development of nanotwins in Na-doped Bi0.5Sb1.5Te3 alloy. Electron. Mater. Lett. 12, 290 (2016)10.1007/s13391-015-5390-5 ↗
4. Xia, Y., Qian, D., Hsieh, D., Wray, L., Pal, A., Lin, H., Bansil, A., Grauer, D., Hor, Y., Cava, R.: Observation of a large-gap topological-insulator class with a single Dirac cone on the surface. Nat. Phys. 5, 398 (2009)10.1038/nphys1274 ↗
5. Zhang, H., Liu, C.-X., Qi, X.-L., Dai, X., Fang, Z., Zhang, S.-C.: Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface. Nat. Phys. 5, 438 (2009)10.1038/nphys1270 ↗
6. Hasan, M.Z., Kane, C.L.: Colloquium: topological insulators. Rev. Mod. Phys. 82, 3045 (2010)10.1103/RevModPhys.82.3045 ↗
7. Qi, X.-L., Zhang, S.-C.: Topological insulators and superconductors. Rev. Mod. Phys. 83, 1057 (2011)10.1103/RevModPhys.83.1057 ↗
8. Alpichshev, Z., Analytis, J.G., Chu, J.H., Fisher, I.R., Chen, Y.L., Shen, Z.X., Fang, A., Kapitulnik, A.: STM imaging of electronic waves on the surface of Bi2Te3: topologically protected surface states and hexagonal warping effects. Phys. Rev. Lett. 104, 016401 (2010)10.1103/PhysRevLett.104.016401 ↗
9. Chen, Y., Chu, J.-H., Analytis, J., Liu, Z., Igarashi, K., Kuo, H.-H., Qi, X., Mo, S.-K., Moore, R., Lu, D.: Massive Dirac fermion on the surface of a magnetically doped topological insulator. Science 329, 659 (2010)10.1126/science.1189924 ↗
10. Chen, Y.L., Liu, Z.K., Analytis, J.G., Chu, J.H., Zhang, H.J., Yan, B.H., Mo, S.K., Moore, R.G., Lu, D.H., Fisher, I.R., Zhang, S.C., Hussain, Z., Shen, Z.X.: Single Dirac cone topological surface state and unusual thermoelectric property of compounds from a new topological insulator family. Phys. Rev. Lett. 105, 266401 (2010)10.1103/PhysRevLett.105.266401 ↗
11. Cheng, P., Song, C., Zhang, T., Zhang, Y., Wang, Y., Jia, J.F., Wang, J., Wang, Y., Zhu, B.F., Chen, X., Ma, X., He, K., Wang, L., Dai, X., Fang, Z., Xie, X., Qi, X.L., Liu, C.X., Zhang, S.C., Xue, Q.K.: Landau quantization of topological surface states in Bi2Se3. Phys. Rev. Lett. 105, 076801 (2010)10.1103/PhysRevLett.105.076801 ↗
12. Hanaguri, T., Igarashi, K., Kawamura, M., Takagi, H., Sasagawa, T.: Momentum-resolved Landau-level spectroscopy of Dirac surface state in Bi2Se3. Phys. Rev. B 82, 081305(R) (2010)10.1103/PhysRevB.82.081305 ↗
13. Roushan, P., Seo, J., Parker, C.V., Hor, Y.S., Hsieh, D., Qian, D., Richardella, A., Hasan, M.Z., Cava, R.J., Yazdani, A.: Topological surface states protected from backscattering by chiral spin texture. Nature (London) 460, 1106 (2009)10.1038/nature08308 ↗
14. Analytis, J.G., McDonald, R.D., Riggs, S.C., Chu, J.-H., Boebinger, G.S., Fisher, I.R.: Two-dimensional surface state in the quantum limit of a topological insulator. Nat. Phys. 6, 960 (2010)10.1038/nphys1861 ↗
15. Checkelsky, J.G., Hor, Y.S., Liu, M.H., Qu, D.X., Cava, R.J., Ong, N.P.: Quantum interference in macroscopic crystals of nonmetallic Bi2Se3. Phys. Rev. Lett. 103, 246601 (2009)10.1103/PhysRevLett.103.246601 ↗
16. Peng, H., Lai, K., Kong, D., Meister, S., Chen, Y., Qi, X.L., Zhang, S.C., Shen, Z.X., Cui, Y.: Aharonov-Bohm interference in topological insulator nanoribbons. Nat. Mater. 9, 225 (2010)10.1038/nmat2609 ↗
17. Takahashi, R., Murakami, S.: Gapless interface states between topological insulators with opposite Dirac velocities. Phys. Rev. Lett. 107, 166805 (2011)10.1103/PhysRevLett.107.166805 ↗
18. Neupane, M., Xu, S.-Y., Wray, L.A., Petersen, A., Shankar, R., Alidoust, N., Liu, C., Fedorov, A., Ji, H., Allred, J.M., Hor, Y.S., Chang, T.-R., Jeng, H.-T., Lin, H., Bansil, A., Cava, R.J., Hasan, M.Z.: Topological surface states and Dirac point tuning in ternary topological insulators. Phys. Rev. B 85, 235406 (2012)10.1103/PhysRevB.85.235406 ↗
19. Qu, D.-X., Hor, Y., Xiong, J., Cava, R., Ong, N.P.: Quantum oscillations and Hall anomaly of surface states in the topological insulator Bi2Te3. Science 329, 821 (2010)10.1126/science.1189792 ↗
20. Ren, Z., Taskin, A.A., Sasaki, S., Segawa, K., Ando, Y.: Observations of two-dimensional quantum oscillations and ambipolar transport in the topological insulator Bi2Se3 achieved by Cd doping. Phys. Rev. B 84, 075316 (2011)10.1103/PhysRevB.84.075316 ↗
21. Chi, H., Liu, W., Sun, K., Su, X., Wang, G., Lost’ak, P., Kucek, V., Drasar, C., Uher, C.: Low-temperature transport properties of Tl-doped Bi2Te3 single crystals. Phys. Rev. B 88, 045202 (2013)10.1103/PhysRevB.88.045202 ↗
22. Chen, Y., Analytis, J., Chu, J.-H., Liu, Z., Mo, S.-K., Qi, X.-L., Zhang, H., Lu, D., Dai, X., Fang, Z.: Experimental realization of a three-dimensional topological insulator, Bi2Te3. Science 325, 178 (2009)10.1126/science.1173034 ↗
23. Xiao, Y., Chen, G., Qin, H., Wu, M., Xiao, Z., Jiang, J., Xu, J., Jiang, H., Xu, G.: Enhanced thermoelectric figure of merit in p-type Bi0.48Sb1.52Te3 alloy with WSe2 addition. J. Mater. Chem. A 2, 8512 (2014)10.1039/c4ta01554a ↗
24. Zhang, T., Jiang, J., Xiao, Y., Zhai, Y., Yang, S., Xu, G.: In situ precipitation of Te nanoparticles in p-type BiSbTe and the effect on thermoelectric performance. ACS Appl. Mater. Interfaces 5, 3071 (2013)10.1021/am303145v ↗
25. Goldsmid, H.J.: The electrical conductivity and thermoelectric power of bismuth telluride. Proc. Phys. Soc. 4, 633 (1958)10.1088/0370-1328/71/4/312 ↗
26. Shigetomi, S., Mori, S.: Electrical properties of Bi2Te3. J. Phys. Soc. Jpn. 11, 915 (1956)10.1143/JPSJ.11.915 ↗
27. Zhitinskaya, M.K., Nemov, S.A., Ivanova, L.D.: The Nernst–Ettingshausen, Seebeck, and Hall effects in Sb2Te3 single crystals. Phys. Solid State 44, 42 (2002)10.1134/1.1434480 ↗
28. Starý, Z., Horak, J., Stordeur, M., Stölzer, M.: Antisite defects in Sb2−xBixTe3 mixed crystals. J. Phys. Chem. Solids 49, 29 (1988)10.1016/0022-3697(88)90130-8 ↗
29. Singleton, J.: Band Theory and Electronic Properties of Solid. Oxford University Press, Oxford (2001)10.1093/oso/9780198506454.001.0001 ↗
30. Hikami, S., Larkin, A.I., Nagaoka, Y.: Spin–orbit interaction and magnetoresistance in the two dimensional random system. Prog. Theor. Phys. 63, 2 (1980)
31. Xu, G., Wang, W., Zhang, X., Du, Y., Liu, E., Wang, S., Wu, G., Liu, Z., Zhang, X.X.: Weak antilocalization effect and noncentrosymmetric superconductivity in a topologically nontrivial semimetal LuPdBi. Sci. Rep. 4, 5709 (2014)10.1038/srep05709 ↗
32. Lu, H.-Z., Shen, S.-Q.: Weak localization of bulk channels in topological insulator thin films. Phys. Rev. B 84, 125138 (2011)10.1103/PhysRevB.84.125138 ↗
33. Andrew, F.M., Snyder, G.J.: Introduction to Modeling Thermoelectric Transport at High Temperatures. CRC Press, New York (2012)
34. Lin, C.-C., Ginting, D., Lydia, R., Lee, M.H., Rhyee, J.-S.: Thermoelectric properties and extremely low lattice thermal conductivity in p-type Bismuth Tellurides by Pb-doping and PbTe precipitation. J. Alloy. Compd. 671, 538 (2016)10.1016/j.jallcom.2016.02.123 ↗