Structural Analysis of InAs1−xSbx Epilayer Considering Occurrence of Crystallographic Tilt Exploiting High-Resolution X-Ray Diffraction
Source abstract
Abstract
InAs1−xSbx epilayer has nonlinearity bandgap energy between 180 and 350 meV according to the relative composition x of Sb at room temperature. For this reason, the wavelengths operating as a photodetector are in the mid-infrared (3–5 μm) and long-wavelength infrared range (8–12 μm). Photodetectors of these wavelengths can be used in the fields of pollutant detection, infrared thermal imaging, lidars, or optical countermeasures. Since the bandgap energy of InAs1−xSbx epilayer changes according to the relative composition of Sb, the measurement of InAs1−xSbx epilayer composition is crucial for predicting device characteristics. In this study, high-resolution X-ray diffraction was used to measure the mean composition of specimens without damaging the specimens of InAs1−xSbx epilayer. InAs1−xSbx thin films were grown epitaxially on the GaSb substrate having a similar lattice constant as the thin films by utilizing the molecular beam epitaxy method at various growth temperature conditions. Here, tilt of the growth direction in InAs1−xSbx thin films was observed despite having no off-cut angle of the GaSb substrate. Cases considering and not considering the tilt of the growth direction were analyzed to show a 3% difference in the relative composition of Sb in InAs1−xSbx thin films. Accordingly, this study revealed that the growth tilt of the epilayer must be taken into account when measuring the precise composition of InAs1−xSbx thin films grown on a GaSb substrate using high-resolution X-ray diffraction. Graphical Abstract
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OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Integrated Circuits and Semiconductor Failure Analysis
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