Study on the formation of zinc peroxide on zinc oxide with hydrogen peroxide treatment using x-ray photoelectron spectroscopy (XPS)
Source abstract
Abstract
In a previous study, we found that zinc oxide (ZnO) samples under different hydrogen peroxide (H2O2) treatment durations show the ability to dramatically rectify a diode’s behavior. In this study, the H2O2 mechanism is examined by grazing incidence x-ray diffraction (GIXRD) and x-ray photoelectron spectroscopy (XPS) analyses. In GIXRD, a diffraction peak (111) from the zinc peroxide (ZnO2) was observed for the films grown at low temperatures. The XPS depth profiles of the core O1s clearly indicated oxidation, and an interfacial ZnO2 layer covered the ZnO surface via the H2O2 treatment. The Schottky barrier heights of the treated and untreated samples were illustrated using energy band diagrams.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Copper-based nanomaterials and applications
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References (27)
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