Microstructure evolution of Al-1% Si bonding wire for microelectronic reliability
Source abstract
Abstract
In order to determine the reliability of Al-1% Si bonding wires, the microstructure of an annealed wire, including grain morphology and secondary phases, was investigated by conventional transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM). The grains are extremely long and thin parallel to the drawn direction, and the average grain size is about 600 nm to 700 nm. Nano-sized thin plate-like Si crystals of about 10 nm length and a few monolayers thickness were observed, and their crystallography and morphology are discussed in this paper.
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Research context
OpenAlex topics: Aluminum Alloys Composites Properties · Semiconductor materials and interfaces · Electronic Packaging and Soldering Technologies
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