journal article·2019

Hole-Mediated Anisotropic Chemical Etching of Crystalline Silicon in HF Solutions: From Pyramidal to Porous Structures

Jiang Wang, Haoxin Fu, Chenliang Huo, Haichuan Zhao, Kui-Qing Peng

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OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Semiconductor materials and devices

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References (35)

Show source-provided references
1. 10.1149/1.242679310.1149/1.2426793 ↗
2. 10.1109/T-ED.1978.1925010.1109/T-ED.1978.19250 ↗
3. 10.1063/1.33918910.1063/1.339189 ↗
4. 10.1149/1.208627710.1149/1.2086277 ↗
5. 10.1109/5.70425910.1109/5.704259 ↗
6. 10.1109/T-ED.1980.1995510.1109/T-ED.1980.19955 ↗
7. 10.1109/PROC.1982.1233110.1109/PROC.1982.12331 ↗
8. 10.1116/1.58308910.1116/1.583089 ↗
9. Campbell S. A. Lewerenz H. J. , Semiconductor Micromachining, Wiley, Chichester (1998).
10. 10.1149/1.242887310.1149/1.2428873 ↗
11. 10.1149/1.242751910.1149/1.2427519 ↗
12. 10.1063/1.10356110.1063/1.103561 ↗
13. 10.1063/1.10451210.1063/1.104512 ↗
14. Zhang X. G. , Electrochemistry of Silicon and Its Oxides, Kluwer Plenum, New York (2001).
15. 10.1016/j.cossms.2006.03.00410.1016/j.cossms.2006.03.004 ↗
16. Sailor M. J. , Porous Silicon in Practice: Preparation, Characterization and Applications, Wiley (2012).
17. 10.1002/352760027210.1002/3527600272 ↗
18. 10.1002/1521-4095(20020816)14:16%3c1164::AID-ADMA1164%3e3.0.CO;2-E10.1002/1521-4095(20020816)14:16%3c1164::AID-ADMA1164%3e3.0.CO;2-E ↗
19. Zwicker W. K. Kurtz S. K. , Semiconductor Silicon, Electrochemical Society, Pennington (1973).
20. 10.1039/C4TA02006E10.1039/C4TA02006E ↗
21. 10.1038/srep1084310.1038/srep10843 ↗
22. 10.1021/acsami.5b0105910.1021/acsami.5b01059 ↗
23. 10.1016/j.solmat.2016.08.03410.1016/j.solmat.2016.08.034 ↗
24. 10.1016/j.sse.2009.09.00510.1016/j.sse.2009.09.005 ↗
25. Sze S. M. , Physics of Semiconductor Devices, John Wiley& Sons, New York (1981).
26. 10.1016/j.solmat.2005.02.01910.1016/j.solmat.2005.02.019 ↗
27. 10.1186/1556-276X-7-32310.1186/1556-276X-7-323 ↗
28. 10.1016/S0927-0248(00)00414-110.1016/S0927-0248(00)00414-1 ↗
29. 10.1021/jp108169b10.1021/jp108169b ↗
30. 10.1016/0022-0728(95)04424-810.1016/0022-0728(95)04424-8 ↗
31. 10.1002/anie.20046299510.1002/anie.200462995 ↗
32. 10.1002/adfm.20080037110.1002/adfm.200800371 ↗
33. 10.1002/admi.20180113210.1002/admi.201801132 ↗
34. 10.1039/b927432d10.1039/b927432d ↗
35. 10.1039/A707473E10.1039/A707473E ↗