Structural and Electrical Investigation of MoS₂Thin Films Formed by Thermal Assisted Conversion of Mo Metal

Large-area synthesis is of great demand for the preparation of high-performance transitionmetal-dichalcogenides (TMD) devices, however there are only limited reports to date of device operation on large-area TMDs. In this work we fabricate MoS 2 devices based on Thermal Assisted Conversion (TAC) of metal layers, and characterise the thin-films with material analysis combined with electrical device parameter extraction. Specifically we report on temperature dependent parameter extraction for Ti/Au contacts to MoS 2 thin-films to determine sheet resistance (R sh ), resistivity (), and the activation energy (E A ) of on-state current flow. For undoped MoS 2 , was determined to be 191 .cm at 25 C. The activation energy of the on-state current was found to be 0.18 eV, pointing to the presence of deep levels in MoS 2 .