Nitrogen Doping Effect on Optical Property of Gallium Oxide Nanowires
Source abstract
Abstract
Nitrogen doping effect on increasing bandgap and enhancing red-to-near infrared (NIR) emissions has been evaluated by thermoreflectance (TR) and photoluminescence (PL) measurements for β-Ga2O3 thin-film nanowires. The incorporation of nitrogen dopant decreases unit-cell size and increases direct bandgap of ∼57 meV for β-Ga2O3 nanowires. Photoluminescence measurements of nitrogen-doped β-Ga2O3 (β-Ga2O3:N) show additional red-to-NIR emission peaks around 1.8 eV in comparison with those of undoped gallium oxide nanowires. The origins for the gap states and near-band-edge transitions in β-Ga2O3:N nanowires are evaluated and discussed.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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