In Situ Doped Polysilicon (ISDP) Hydrophilic Direct Wafer Bonding for MEMS Applications
Source abstract
Abstract
In this paper, Chemical Mechanical Polishing is used to reduce RMS roughness of as-deposited ISDP from 3.2 nm down to 0.18 nm. This surface preparation allows ISDP thin films to be direct bonded to polycrystalline and monocrystalline Si, as well as thermal SiO2. Mechanically strong bondings are obtained showing surface energies higher than the Si fracture energy of 2250 mJ.m−2 and adherence energy up to more than 6000 mJ.m−2 after annealing at 1100 °C. Infrared images and Scanning Acoustic Microscopy confirm that ISDP can be used to fabricate void-free assemblies after annealing. The hermeticity analysis of cavities sealed by ISDP direct bonding showed maximum leak rate lower than 10−11 Pa.m3s−1 after 18 weeks.
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Research context
OpenAlex topics: Advanced Surface Polishing Techniques · 3D IC and TSV technologies · Advanced MEMS and NEMS Technologies
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References (15)
Show source-provided references
1. MEMS on cavity-SOI wafers10.1016/j.sse.2007.01.007 ↗
2. Wafer-level bonding/stacking technology for 3D integration10.1016/j.microrel.2009.09.015 ↗
3. Fabrication and electrical characterization of high aspect ratio poly-silicon filled through-silicon vias10.1088/0960-1317/22/5/055021 ↗
4. Via Technologies for MEMS10.1016/B978-0-323-29965-7.00038-5 ↗
5. Low temperature direct bonding: an attractive technique for heterostructures build-up10.1016/j.microrel.2011.08.004 ↗
6. Low-temperature bonding of thick-film polysilicon for microelectromechanical system (MEMS)10.1007/s00542-005-0037-3 ↗
7. Chemical-mechanical polishing for polysilicon surface micromachining10.1149/1.1837391 ↗
8. Controlled chemical mechanical polishing of polysilicon and silicon dioxide for single-electron device10.1116/1.2433986 ↗
9. The atomic-scale removal mechanism during chemo-mechanical polishing of Si (100) and Si (111)10.1016/0039-6028(95)00292-8 ↗
10. Chemical mechanical polishing of boron-doped polycrystalline silicon10.1117/12.2036822 ↗
11. Bonding of silicon wafers for silicon‐on‐insulator10.1063/1.342443 ↗
12. Semiconductor wafer bonding10.1146/annurev.matsci.28.1.215 ↗
13. Low-temperature hydrophobic silicon wafer bonding10.1063/1.1632032 ↗
14. Scanning acoustic microscopy and its applications to material characterization10.1103/RevModPhys.67.863 ↗
15. Environmental stress testing of wafer-level Au-Au thermocompression bonds realized at low temperature: strength and hermeticity10.1149/2.0201507jss ↗