Study of High-Ge-Content Si0.16Ge0.84Gate Stack by Low Pressure Oxidation
Source abstract
Abstract
In this study, we employed low-pressure oxidation (LPO) to achieve a high-quality dielectric gate stack on high-Ge-content (HGC) Si0.16Ge0.84. According to X-ray photoelectron spectroscopy depth-profiling results, lowering the oxidation pressure can drive out-diffusion of Si atoms from the HGC SiGe surface, resulting in the suppression of GeOx formation. A nearly GeOx-free interfacial layer detected at an O2 pressure of 0.01 torr at 600°C was used. Consequently, the formation of stable SiOx resulted in the improvement of Dit and gate leakage current, which in accumulation (VFB−1V) was also considerably reduced with an equivalent oxide thickness of 1.5 nm. Finally, by applying the LPO process and optimized process conditions, the interface trap density (Dit) was reduced to 2 × 1012 eV−1cm−2.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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