THz Imaging for Failure Analysis of RF Circuit
Source abstract
Abstract
It is shown that sub-THz images of a GaN/AlGaN RF power FET allow one to unambiguously identify which part of the device is operational, when we purposely disconnect different portions of the device from the power supply. The effect is explained by a combination of factors including the contact pad geometry, orientation of bonding wires, and distribution of channel current in different portions of the device and their impact on coupling of THz radiation into the device. This work paves the way for potential application of THz imaging for failure analysis of RF circuit.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Terahertz technology and applications · Semiconductor Quantum Structures and Devices · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (15)
Show source-provided references
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