Thin Quaternary Layer and Staggered Electron Blocking Layers for Improved Ultraviolet Light-Emitting Diodes
Source abstract
Abstract
We have carried out numerical investigations of AlGaN-based ultraviolet light-emitting diodes (UV LEDs). We have shown that the unequal carrier distribution, which is typical in III-N LEDs, is mitigated in the active region. To improve the performance, we have used a thin AlInGaN quaternary layer (QL) between the final quantum barrier (FQB) and the electron blocking layer (EBL). We have also compared the results with a staggered or step-graded electron blocking layer which is known to show enhanced device output. The hole insertion has been found to greatly improve in all the multiquantum wells (MQWs) of our numerically designed LEDs. The radiative recombination rate has been found to be enhanced by ∼82% in comparison to reference LED.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Photocathodes and Microchannel Plates · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23460 Khyber Pakhtunkhwa,
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