Improved Efficiency Droop of 370 nm UV LEDs with ITO/Au/ITO Structure
Source abstract
Abstract
In this paper, a method of indium-tin oxide/Au/indium-tin oxide (IAI) structure as transparent conductive layers (TCLs) to improve the current spreading and suppress efficiency droop of ultraviolet light-emitting diodes (UV-LEDs) is investigated. The morphology and distribution of Au clusters formed by annealing are investigate by atomic force microscope and scanning electron microscope. Compared with the UV-LED without Au clusters, the forward voltage of UV-LED is reduced by 5.9% at 20 mA, light output power and wall plug efficiency increase by 64.2% and 84.2% at 300 mA for the UV-LED with IAI structure as the thickness of the Au interlayer is 1 nm. In addition, light emission distribution results show that by inserting Au interlayer, current distributes more uniform and the current spreading characteristics of UV-LED are improved. Ultimately, efficiency droop of the LED has been suppressed.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (39)
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1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies10.1038/s41566-019-0359-9 ↗
2. Monolithic integration of deep ultraviolet LED with a multiplicative photoelectric converter10.1016/j.nanoen.2019.104181 ↗
3. Enhanced Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Incorporating High-Reflective n-Type Electrode Made of Cr/Al10.1109/Ted.2019.2914487 ↗
4. Improved crystal quality and enhanced optical performance of GaN enabled by ion implantation induced high-quality nucleation10.1364/OE.492088 ↗
5. Electrochemical potentiostatic activation for improvement of internal quantum efficiency of 385-nm ultraviolet light-emitting diodes10.1016/j.apsusc.2013.06.138 ↗
6. Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array10.1016/j.nanoen.2019.104427 ↗
7. Design and comparative study of lateral and vertical LEDs with graphene as current spreading layer10.1016/j.spmi.2015.07.029 ↗
8. Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes10.1063/1.4769374 ↗
9. Origin of efficiency droop in GaN-based light-emitting diodes10.1063/1.2800290 ↗
10. InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes10.1364/OL.452477 ↗
11. Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer10.1063/1.3531753 ↗
12. Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs10.1109/Ted.2011.2176132 ↗
13. Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes10.1063/1.3671395 ↗
14. Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier10.1063/1.3591967 ↗
15. Improving the Current Spreading by Fe Doping in n-GaN Layer for GaN-Based Ultraviolet Light-Emitting Diodes10.1109/Led.2021.3100545 ↗
16. Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes10.1364/OE.403168 ↗
17. Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer10.1063/1.4817800 ↗
18. Monolithically Integrating III-Nitride Quantum Structure for Full-Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth10.1002/lpor.202200455 ↗
19. Highly efficient GaN-based high-power flip-chip light-emitting diodes10.1364/OE.27.00A669 ↗
20. Fabrication and Improved Performance of GaN LEDs With Finger-Type Structure10.1109/Ted.2014.2361762 ↗
21. GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction10.1016/j.optlastec.2017.01.017 ↗
22. Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer10.1016/j.apsusc.2015.07.194 ↗
23. Study of a GaN-Based Light-Emitting Diode With a Ga₂O₃ Current Blocking Layer and a Ga₂O₃ Surface Passivation Layer10.1109/ted.2021.3091948 ↗
24. Ultraviolet light-emitting diode arrays using Ga-doped ZnO as current spreading layer10.1116/1.5127064 ↗
25. Improvement of light extraction for a target wavelength in InGaN/GaN LEDs with an indium tin oxide dual layer by oblique angle deposition10.7567/APEX.9.082103 ↗
26. The race to replace tin-doped indium oxide: which material will win?10.1021/nn901903b ↗
27. Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes10.1016/j.apsusc.2013.10.079 ↗
28. Improved optoelectronics properties of ITO-based transparent conductive electrodes with the insertion of Ag/Ni under-layer10.1016/j.apsusc.2014.07.172 ↗
29. Sputtered ITO/Ag/ITO Films: Growth Windows and Ag/ITO Interfacial Properties10.1007/s11664-022-09519-5 ↗
30. Transparent conductive ITO/Ag/ITO multilayer electrodes deposited by sputtering at room temperature10.1016/j.optcom.2008.10.075 ↗
31. ITO/Au/ITO multilayer thin films for transparent conducting electrode applications10.1016/j.apsusc.2007.07.080 ↗
32. Dependence of intermediated noble metals on the optical and electrical properties of ITO/metal/ITO multilayers10.1016/j.optcom.2008.12.044 ↗
33. Improvement of the opto-electrical properties of transparent conducting oxide lamellar films10.1134/S0031918X14130067 ↗
34. Optimized ITO/Ag/ITO multilayers as a current spreading layer to enhance the light output of ultraviolet light-emitting diodes10.1016/j.jallcom.2018.10.368 ↗
35. One-step etching characteristics of ITO/Ag/ITO multilayered electrode in high-density and high-electron-temperature plasma10.3390/ma14082025 ↗
36. Formation of low-temperature self-organized nanoscale nickel metal islands10.1088/0957-4484/14/11/011 ↗
37. Extended and localized surface plasmons in annealed Au films on glass substrates10.1063/1.3485825 ↗
38. Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer10.1109/led.2012.2197593 ↗
39. Enhanced external quantum efficiencies of AlGaN-based deep-UV LEDs using reflective passivation layer10.1364/OE.441389 ↗