Effect of Ga³⁺Doping on the Photoluminescence Properties of Y₃Al_{5-x}Ga_{x}O₁₂:Bi³⁺Phosphor

A. Yousif; Vinod Kumar; H. A. A. Seed Ahmed; S. Som; L. L. Noto; O. M. Ntwaeaborwa; H. C. Swart

doi:10.1149/2.0021412jss

journal article·2014Open access

Effect of Ga³⁺Doping on the Photoluminescence Properties of Y₃Al_5-xGa_xO₁₂:Bi³⁺Phosphor

A. Yousif, Vinod Kumar, H. A. A. Seed Ahmed, S. Som, L. L. Noto, O. M. Ntwaeaborwa, H. C. Swart

ECS Journal of Solid State Science and Technology· Volume 3· Issue 11

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Abstract

The structural and luminescence characteristics of a sol-gel combustion synthesized Y3Al5-xGaxO12:Bi3+ phosphor with different concentration of Ga3+were investigated. The Rietveld refinement analysis and luminescence studies indicated that increasing the concentration of the Ga ions changed the bond lengths and lattice parameters of the dodecahedron bonds and as a result the Bi3+ experienced a different anionic environment in the YAG host. A systematic shift of the photoluminescence excitation and emission spectra to higher wavelengths was observed with an increase of the Ga3+ concentration. The shift is attributed to the distortion of the host lattice as observed from the changing parameter and the covalency of the host with an increase of the Ga3+ concentration.

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OpenAlex topics: Luminescence Properties of Advanced Materials · Radiation Detection and Scintillator Technologies · Perovskite Materials and Applications

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